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Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter

Guangdong Zhufeng Electric Co., Ltd.
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    Buy cheap Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter from wholesalers
     
    Buy cheap Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter from wholesalers
    • Buy cheap Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter from wholesalers

    Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter

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    Brand Name : ZFeng
    Payment Terms : L/C,D/A,D/P,T/T,Western Union,MoneyGram
    Delivery Time : 3 Days
    Supply Ability : 500-10000 per Month
    Certification : CE、CB、CCC、ISO9001、ISO14001、ISO45001、EN61439、EN61000
    Price : ¥170 ~ 310
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    Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter

    ZFeng IGBT Module


    IGBT Module (Insulated Gate Bipolar Transistor Module) is a power semiconductor device module that integrates multiple IGBT chips, free-wheeling diodes (FWDs), and associated drive/protection circuits. It is widely applied in power electronics conversion and control systems.


    1. Core Components and Operating Principles

    • IGBT Chips: The core of the module, combining the high input impedance of MOSFETs and the low on-state voltage drop of bipolar transistors, enabling high-speed switching and low losses.
    • Free-Wheeling Diodes (FWDs): Connected in anti-parallel with IGBTs to release energy stored in inductive loads, preventing voltage spikes from damaging devices.
    • Drive and Protection Circuits: Integrated with functions such as signal isolation, overcurrent/overvoltage protection, and temperature monitoring to ensure stable module operation.
    • Packaging Technology: Utilizes ceramic substrates, copper baseplates, etc., optimizing thermal performance (thermal resistance as low as 0.1–0.2 K/W) and enhancing electrical insulation.

    2. Technical Advantages

    • High Power Density: Modular design significantly increases power-handling capability per unit volume. For example, Infineon's PrimePACK™ modules enable hundreds of kilowatts to megawatts of output.
    • High Reliability: Through redundant design, fault self-diagnosis, and thermal management technologies, modules achieve a mean time between failures (MTBF) exceeding 100,000 hours in industrial applications like variable frequency drives.
    • Ease of Use: Built-in drive circuits simplify system design, allowing users to quickly deploy applications by providing only control signals and power.

    3. Typical Application Scenarios

    • Industrial Drives: Used in motor speed control, fan/pump regulation.
    • Renewable Energy Generation: In photovoltaic inverters, IGBT modules convert DC to AC for grid integration.
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